? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 85 v v dgr t j = 25 c to 150 c, r gs = 1m - 85 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c - 24 a i dm t c = 25 c, pulse width limited by t jm - 80 a i a t c = 25 c - 24 a e as t c = 25 c 200 mj p d t c = 25 c83w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 3.0 g to-263 2.5 g ds99969b(01/13) trenchp tm power mosfets p-channel enhancement mode avalanche rated ixta24p085t IXTP24P085T v dss = - 85v i d25 = - 24a r ds(on) 65 m g = gate d = drain s = source tab = drain to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab) features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a - 85 v v gs(th) v ds = v gs , i d = - 250 a - 2.5 - 4.5 v i gss v gs = 15v, v ds = 0v 50 na i dss v ds = v dss , v gs = 0v - 3 a t j = 125 c -100 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 65 m
ixys reserves the right to change limits, test conditions, and dimensions. ixta24p085t IXTP24P085T ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 10 16 s c iss 2090 pf c oss v gs = 0v, v ds = - 25v, f = 1mhz 243 pf c rss 117 pf t d(on) 18 ns t r 26 ns t d(off) 53 ns t f 26 ns q g(on) 41 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 17 nc q gd 11 nc r thjc 1.5 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 24 a i sm repetitive, pulse width limited by t jm - 96 a v sd i f = - 24a, v gs = 0v, note 1 -1.5 v t rr 40 ns q rm 72 nc i rm - 3.6 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = -12a, -di/dt = -100a/ s v r = - 43v, v gs = 0v pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline pins: 1 - gate 2,4 - drain 3 - source
? 2013 ixys corporation, all rights reserved ixta24p085t IXTP24P085T fig. 1. output characteristics @ t j = 25oc -24 -20 -16 -12 -8 -4 0 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 5 v - 6 v - 7 v fig. 2. extended output characteristics @ t j = 25oc -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v - 8 v - 9 v fig. 3. output characteristics @ t j = 125oc -24 -20 -16 -12 -8 -4 0 -2.4 -2.2 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 6v - 5v - 7v fig. 4. r ds(on) normalized to i d = -12a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 24a i d = -12a fig. 5. r ds(on) normalized to i d = -12a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -84 -72 -60 -48 -36 -24 -12 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -28 -24 -20 -16 -12 -8 -4 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta24p085t IXTP24P085T fig. 7. input admittance -36 -32 -28 -24 -20 -16 -12 -8 -4 0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 4 8 12 16 20 24 28 -40 -36 -32 -28 -24 -20 -16 -12 -8 -4 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -70 -60 -50 -40 -30 -20 -10 0 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = - 43v i d = -12a i g = -1ma fig. 11. capacitance 100 1,000 10,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1 10 100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms - - - --- 100ms
? 2013 ixys corporation, all rights reserved ixta24p085t IXTP24P085T fig. 14. resistive turn-on rise time vs. drain current 23 24 25 26 27 28 29 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 i d - amperes t r - nanoseconds r g = 10 ? , v gs = -10v v ds = - 43v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t r - nanoseconds 14 16 18 20 22 24 26 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 43v i d = - 24a, -12a fig. 16. resistive turn-off switching times vs. junction temperature 22 23 24 25 26 27 28 29 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 30 34 38 42 46 50 54 58 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = -10v v ds = - 43v i d = -12a i d = - 24a fig. 17. resistive turn-off switching times vs. drain current 26 30 34 38 42 46 50 54 58 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 i d - amperes t f - nanoseconds 22 23 24 25 26 27 28 29 30 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = - 10v v ds = - 43v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 22 23 24 25 26 27 28 29 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v gs = -10v v ds = - 43v i d = -12a i d = - 24a fig. 18. resistive turn-off switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 100 10 12 14 16 18 20 22 24 26 28 30 32 34 r g - ohms t f - nanoseconds 20 30 40 50 60 70 80 90 100 110 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 43v i d = -12a, - 24a
ixys reserves the right to change limits, test conditions, and dimensions. ixta24p085t IXTP24P085T ixys ref: t_24p085t(a1)11-05-10-a fig. 19. maximum transient thermal impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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